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Fe2O3:SnO2 Nanostructured System as Semiconductor Gas Sensor Material

Published online by Cambridge University Press:  01 February 2011

J. Arbiol ,
J. R. Morante ,
M. Rumyantseva ,
V. Kovalenko  and
A. Gaskov
J. Arbiol
Affiliation:
Enginyeria i Materials Electrònics, Departament d'Electrònica, Universitat de Barcelona, C/. Martí i Franqués, 1, Barcelona, E-08028 (Spain). SCT, Universitat de Barcelona, Lluís Solé i Sabarís, 1–3, Barcelona, E-08028 (Spain). Contact e- mail: [email protected] URL:http://nun97.el.ub.es/~arbiol/
J. R. Morante
Affiliation:
Enginyeria i Materials Electrònics, Departament d'Electrònica, Universitat de Barcelona, C/. Martí i Franqués, 1, Barcelona, E-08028 (Spain).
M. Rumyantseva
Affiliation:
Chemistry Department. Moscow State University, Moscow, Russia
V. Kovalenko
Affiliation:
Chemistry Department. Moscow State University, Moscow, Russia
A. Gaskov
Affiliation:
Chemistry Department. Moscow State University, Moscow, Russia
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Abstract

In the present work, we report a detailed study based on transmission electron microscopy of the microstructure and composition of the Fe2O3: SnO2 nanometrical binary system obtained by sol-gel. We studied a set of samples based in a pure Fe2O3 material where we added SnO 2 from 0 to 50% Sn-Fe nominal content. The structure of our composites will change from pure a-Fe2O3 to the well-known cassiterite SnO 2 structure for high Sn content. Distortions on the structural parameters will be attributed to the presence Sn4+ ions on the α-Fe2O3 structure and Fe3+ ions on the SnO2 cassiterite structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A5.15
Copyright
Copyright © Materials Research Society 2005

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References

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