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Fast Color Detection with Two-Terminal P-I-I-N Devices

Published online by Cambridge University Press:  10 February 2011

T. Neidlinger ,
M. B. Schubert ,
G. Schmid  and
H. Brummack
T. Neidlinger
Affiliation:
Inst. f. Physikal. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
M. B. Schubert
Affiliation:
Inst. f. Physikal. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
G. Schmid
Affiliation:
Inst. f. Physikal. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
H. Brummack
Affiliation:
Inst. f. Physikal. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

In order to overcome the intrinsic speed limitation of amorphous silicon nipin color sensors we present an alternative way of achieving bias-controlled spectral sensitivity of two-terminal thin film devices, piin structures with appropriate band gap and thickness of their single layers can be used as photodetectors that are able to sequentially extract different color signals. Color separation is achieved by controlling the absorption and electric field profile across these piin devices, and thanks to the differences in electron and hole transport properties. Because in contrast to nipin devices there is no need for reverting readout voltages for color separation, this type of sensors can be operated at much higher readout frequencies. Spectral response and bias voltage transients have been analysed up to 20kHz, and preliminiary data are presented on the optimization of speed, dynamic range and color separation by varying bandgap and thickness of p- and i-layers. Furthermore a three-color sensor has been realized by introducing an additional intrinsic layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 147
Copyright
Copyright © Materials Research Society 1996

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