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Far Infrared Magneto-Optical Absorption in Small Bismuth Particles

Published online by Cambridge University Press:  28 February 2011

Robert P. Devaty  and
Ralph E. Sherriff
Robert P. Devaty
Affiliation:
University of Pittsburgh, 100 Allen Hall, Pittsburgh, PA 15260
Ralph E. Sherriff
Affiliation:
University of Pittsburgh, 100 Allen Hall, Pittsburgh, PA 15260
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Abstract

A semiclassical model based on the measured properties of the free carriers in bulk bismuth successfully accounts for far infrared (ῶ ≤ 60 cm−1) magnetic field dependent resonances observed in free-standing powders of ∼0.5 μm diameter Bi particles prepared by inert gas evaporation. In earlier work, we found that particles with each of the three principal axes aligned parallel to the applied field were required to explain the data. The conclusion that these particles are bulk-like in nature remains valid when an ensemble of randomly oriented particles is treated using a Monte Carlo method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 195: Symposium S – Physical Phenomena in Granular Materials , 1990 , 15
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Edel'man, V. S., Adv. Phys. 25, 555 (1976).Google Scholar
[2] Fal'kovskii, L. A., Usp. Fiz. Nauk 94, 3 (1969) [Soy. Phys.-Usp. 11, 1 (1968)].Google Scholar
[3] Boyle, W. S. and Smith, G. E., in Progress in Semiconductors, edited by Gibson, A. F. and Burgess, R. E. (Wiley, New York, 1963), Vol. 7, p. 1.Google Scholar
[4] Boyle, W. S. and Brailsford, A. D., Phys. Rev. 120, 1943 (1960).Google Scholar
[5] Hebel, L. C. and Wolff, P. A., Phys. Rev. Lett. 11, 368 (1963).Google Scholar
[6] Burgiel, J. C. and Hebel, L. C., Phys. Rev. 140, A925 (1965).Google Scholar
[7] Blewitt, R. L. and Sievers, A. J., J. Low Temp. Phys. 13, 617 (1973).Google Scholar
[8] Kulakovskii, V. D., Rozhdestvenskaya, V. V., Belov, A. G., Vavilov, V. S., Gippina, A. A., Egorov, V. D., and Zemskov, V. S., Fiz. Tekh. Poluprovdn. 6, 2268 (1972) [Soy. Phys.-Semicond. 6, 1912 (1973)].Google Scholar
[9] Drew, H. D. and Strom, U., Phys. Rev. Lett. 25, 1755 (1970).Google Scholar
[10] Strom, U., Drew, H. D., and Koch, J. F., Phys. Rev. Lett. 26, 1110 (1971).Google Scholar
[11] Strom, U., Kamgar, A., and Koch, J. F., Phys. Rev. B 7, 2435 (1973).Google Scholar
[12] Verdun, H. R. and Drew, H. D., Phys. Rev. B 14, 1370 (1976); H. D. Drew and H. R. Verdun, Phys. Condensed Matter 19, 371 (1975).Google Scholar
[13] Chin, A. K., Ph.D. thesis, Cornell University, Ithaca, NY, 1977.Google Scholar
[14] Lax, B. and Mavroides, J. G., Zeiger, H. J., and Keyes, R. J., Phys. Rev. Lett. 5, 241 (1960).Google Scholar
[15] Brown, R. N., Mavroides, J. G., Dresselhaus, M. S., and Lax, B., Phys. Rev. Lett. 5, 243 (1960).Google Scholar
[16] Brown, R. N., Mavroides, J. G., and Lax, B., Phys. Rev. 129, 2055 (1963).Google Scholar
[17] Maltz, M. and Dresselhaus, M. S., Phys. Rev. B 2, 2877 (1970).Google Scholar
[18] Vecchi, M. P. and Dresselhaus, M. S., Phys. Rev. B 9 3257 (1974).Google Scholar
[19] Vecchi, M. P. and Dresselhaus, M. S., Phys. Rev. B 10, 771 (1974).Google Scholar
[20] Vecchi, M. P., Pereira, J. R., and Dresselhaus, M. S., Phys. Rev. B 14, 298 (1976).Google Scholar
[21] Devaty, R. P., Phys. Rev. B 38, 7972 (1988), and references therein.Google Scholar
[22] Galeener, F. L. and Furdyna, J. K., Phys. Rev. B 4, 1853 (1971); T. A. Evans and J. K. Furdyna, ibid. 8, 1461 (1973).Google Scholar
[23] Dixon, J. R. Jr., and Furdyna, J. K., Phys. Rev. B 18, 6770 (1978).Google Scholar
[24] Markiewicz, R. S. and Timusk, T., in Electron-Hole Droplets in Semiconductors, edited by Jeffries, C. D. and Keldysh, L. V. (North-Holland, New York, 1983), pp. 543–618.Google Scholar
[25] Allen, S. J. Jr., Stormer, H. L., and Hwang, J. C., Phys. Rev. B 28, 4875 (1983).Google Scholar
[26] Ford, G. W. and Werner, S. A., Phys. Rev. B 18, 6752 (1978).Google Scholar
[27] Mie, G., Ann. Phys. (Leipzig) [Folge 4] 25, 377 (1908).Google Scholar
[28] Kubo, R., J. Phys. Soc. Jpn. 17, 975 (1962).Google Scholar
[29] Sikorski, Ch. and Merkdt, U., Phys. Rev. Lett. 62, 2164 (1989).Google Scholar
[30] Alsmeier, J., Batke, E., and Kotthaus, J. P., Phys. Rev. B 41, 1699 (1990).Google Scholar
[31] Demel, T., Heitmann, D., Granbow, P., and Ploog, K., Phys. Rev. Lett. 64, 788 (1990).Google Scholar
[32] Sherriff, R. E. and Devaty, R. P., Phys. Rev. B 41, 1340 (1990).Google Scholar
[33] Markiewicz, R. S., Phys. Rev. B 18, 4260 (1978).Google Scholar
[34] Kononenko, V. L. and Murzin, V. N., Zh. Eksp. Teor. Fiz. 75, 124 (1978) [Soy. Phys.--JETP 48, 61 (1978)].Google Scholar
[35] Visscher, P. B. and Falicov, L. M., Phys. Rev. B 2, 1518 (1970).Google Scholar
[36] Lax, B., Button, K. J., Zeiger, H. J., and Roth, L. M., Phys. Rev. 102, 715 (1956).Google Scholar
[37] Lax, B. and Mavroides, J. G., in Solid State Physics, edited by Seitz, F. and Turnbull, D. (Academic, New York, 1960), Vol. 11, p. 261.Google Scholar
[38] Takano, S. and Kawamura, H., J. Phys. Soc. Jpn. 28, 348 (1970).Google Scholar
[39] Feder, J. and McLachlan, D. S., Phys. Lett. 29A, 431 (1969).Google Scholar
[40] Granqvist, C. G. and Buhrman, R. A., J. Appl. Phys. 47, 2200 (1976).Google Scholar
[41] Dresselhaus, G., Kip, A. F., and Kittel, C., Phys. Rev. 92, 827 (1953); 98, 368 (1955); 100, 618 (1955).Google Scholar
[42] Sherriff, R. E. and Devaty, R. P., Physica A 157, 395 (1989).Google Scholar
[43] Sherriff, R. E. and Devaty, R. P., Bull. Am. Phys. Soc. 33, 282 (1988).Google Scholar
[44] Ashcroft, N. W. and Mermin, N. D., Solid State Physics (Holt, Rinehart and Winston, New York, 1976).Google Scholar