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Factors Controlling Transport Properties of Interfaces in High-Tc Superconductors

Published online by Cambridge University Press:  10 February 2011

H. Hilgenkamp ,
R. R. Schulz ,
C. W. Schneider ,
B. Goetz ,
A. Schmehl ,
H. Bielefeldt  and
J. Mannhart
H. Hilgenkamp
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
R. R. Schulz
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
C. W. Schneider
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
B. Goetz
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
A. Schmehl
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
H. Bielefeldt
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
J. Mannhart
Affiliation:
Exp. Phys. VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-861 35 Augsburg, Germany.
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Abstract

A comprehensive understanding of the transport properties of interfaces in high-Tc cuprates been obtained by considering their microstructure, the possibility of bending of the electronic band structure in these materials, and the predominant dx2-y2 -symmetry of the order parameter in most high-Tc cuprates. These factors are of central importance for the critical current density and the normal state resistivity of grain boundaries and their dependencies on boundary misorientation and on applied magnetic and electrical fields. In addition, some of these factors play an important role for the transport properties of other interfaces involving high-Tc superconductors, such as superconductors-normal metal contacts.

Based on the improved understanding of the mechanisms controlling interface transport properties, we have been able to meet a long-standing challenge in high-Tc superconductivity and have increased the critical current densities of grain boundaries by large factors, using appropriate doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 261
Copyright
Copyright © Materials Research Society 1999

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References

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