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Facet Formation on One-Dimensionally, Periodic Si Substrates

Published online by Cambridge University Press:  15 February 2011

D.P. Adams  and
S.M. Yalisove
D.P. Adams
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St, Ann Arbor, MI, 48109–2136
S.M. Yalisove
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St, Ann Arbor, MI, 48109–2136
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Abstract

The development of surface morphology during homoepitaxial growth on one-dimensionally periodic, patterned Si substrates and subsequent annealing has been investigated using transmission electron Microscopy. Si layers grown by MBE are characterized in terms of facets which develop at a trench edge. 1000 Å thick films deposited at ∼ 600°C on Si substrates develop large (311) facets at the bottom and top of the sidewall. After annealing at high temperatures for short times (∼ 1 hour), the amplitude of corrugation decreases but the surface profile is facetted along its length. The “annealed shape” at the trench edge is shown to consist of several surfaces including: (211), (311), (511), and (711). This evidence suggests that (311) facets develop as a result of the growth kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 35
Copyright
Copyright © Materials Research Society 1994

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References

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