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Facet Evolution and Selective Growth of GaAs/AlGaAs Lateral Structure Grown by Growth–Interrupted Chemical Beam Epitaxy Using Unprecracked Monoethylarsine

Published online by Cambridge University Press:  15 February 2011

Jeong-Rae Ro ,
Sung-Bock Kim ,
Seong-Ju Park ,
Jihwa Lee  and
El-Hang Lee
Jeong-Rae Ro
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Sung-Bock Kim
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Seong-Ju Park
Affiliation:
Kwangju Institute of Science and Technology, Kwangju 506–303, Korea
Jihwa Lee
Affiliation:
Seoul National University, Seoul 151–742, Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
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Abstract

Facet evolution and selective area epitaxy of GaAs/AIGaAs ridge and V-groove structure grown on non-planar GaAs(100) substrate by chemical beam epitaxy(CBE) have been investigated for nanostructure applications. To enhance the crystallographic selectivity and to study the new facet evolution on patterned substrate, GaAs and AlGaAs epilayer were grown by growth-interruption mode and continuous mode, respectively. High selectivity of GaAs layer was observed to depend on the various crystallographic planes even at low growth temperature. This was attributed to the efficient Ga surface migration and desorption during the growth-interruption periods. The growth-interruption method was found to be very efficient in improving the morphology of faceted surfaces. We demonstrated that the formation of (111) V-groove and (411) ridge GaAs structures which were surrounded by AlGaAs layer to show the potential implication of this method for the formation of quantum wires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 55
Copyright
Copyright © Materials Research Society 1996

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