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Fabricaton Ofactive Devices and Logic Gates on Fibers

Published online by Cambridge University Press:  15 February 2011

Yong Woo Choi ,
Ioannis Kymissis ,
Annie Wang  and
Akintunde I. Akinwande
Yong Woo Choi
Affiliation:
Microsystems Technology Lab. (MTL)
Ioannis Kymissis
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), 60 Vassar St. Cambridge, MA02139
Annie Wang
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), 60 Vassar St. Cambridge, MA02139
Akintunde I. Akinwande
Affiliation:
Microsystems Technology Lab. (MTL) Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), 60 Vassar St. Cambridge, MA02139
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Abstract

Textiles are a suitable substrate for large area, flexible and wearable electronics because of their excellent flexibility, mechanical properties and low cost manufacturability. The ability to fabricate active devices on fiber is a key step for achieving large area and flexible electronic structures. We fabricated transistors and inverters with a-Si film and pentacene film on Kapton film and cut them into fibers. The a-Si TFT showed a threshold voltage of 8.5 V and on/off ratio of 103 at a drain voltage of 10 V. These are similar to the characteristics of a TFT fabricated on a glass substrate at the same time. The maximum gain of the inverter with an enhancement n-type load was 6.45 at a drain voltage of 10 V. The pentacene OTFT showed a threshold voltage of -8 V and on/off ratio of 103 at a drain voltage of -30 V. The inverter with a depletion p-type load showed a voltage inversion but the inversion occurred at the wrong voltage. The antifuse was successfully programmed with a voltage pulse and also a current pulse. The resistance decreased from 10 GΩ to 2 kΩ after the programming.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H8.6
Copyright
Copyright © Materials Research Society 2003

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