Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:25:14.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication Processes and Characteristics of Microelectromechanical System Using PZT Films

Published online by Cambridge University Press:  15 February 2011

Y. S. Yoon ,
J. H. Kim ,
T. H. Lim ,
U. A. Bonne ,
A. M. Schmidt  and
D. L. Polla
Y. S. Yoon
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis MN 55455
J. H. Kim
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis MN 55455
T. H. Lim
Affiliation:
Department of Chemistry and Department of Chemical Engineering and Material Science
U. A. Bonne
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis MN 55455
A. M. Schmidt
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis MN 55455
D. L. Polla
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis MN 55455
Get access

Abstract

This paper gives a brief overview of fabrication problems and solutions for microelectromechnical system (MEMS) using PZT films based on surface micromachining techniques. In addition we report characteristics of PZT films on diagnostic test structures designed to test the new bottom electrode for MEMS. PZT(53/47) films were deposited by metalorganic decomposition on a 3″ silicon wafer with Pt/Ti/TiO2/Poly-Si/Si3N4 structure in order to fabricate piezoelectric cantilever beam microaccelerometers and uncooled infrared (IR) detectors. In order to investigate the feasibility of RuO2/Ru and Pt/RuO2 conducting layers as a new bottom electrode for piezoelectric MEMS, the piezoelectric constant (d33) of the PZT films on each bottom electrode was measured. Furthermore, we show the fraction of working top electrodes among 20 total electrodes according to electrode size to investigate the stability of PZT with different bottom electrodes. These results suggest that RuO2/Ru and Pt/RuO2 are possible for bottom electrodes of MEMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 143
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Paula, G., Mechnical Eng. 118. 65, (1996).Google Scholar
2. Polla, D. L., Microelectronic Eng. 29, 51 (1995).Google Scholar
3. Polla, D. L., Schiller, P. J., Integrated Ferroelectrics 7, 359 (1995).Google Scholar
4. Ristics, L., Sensor Technology and Devices (Artech House, Boston, London, 1994), pp.401 Google Scholar
5. Kim, J. H., Wang, L., Zurn, S. M., Li, L., Yoon, Y. S. and Polla, D. L., Integrated Ferroelectrics, (accepted) 1996.Google Scholar
6. Polla, D. L., Ye, C. and Tamagawa, T., Appl. Phys. Lett. 59, 3539 (1991).Google Scholar
7. Polla, D. L. and Francis, L. F., MRS Bulletin July 1996, pp. 59.Google Scholar
8. Luginbuhl, Ph., Racine, G. A., Lerch, Ph., Romanowicz, B., Brooks, K. G., deRooij, N. F., Ranaud, Ph. and Setter, N., 8th International Conference on Solid State Sensor and Actuators, 1995, pp.413.Google Scholar
9. Yoon, Y. S., Wang, C. H., Han, Y. K., Yom, S. S. and Choi, D. J., “Double conducting bottom electrode of Pt/RuO2 on Si for deposition of ferroelectric film” to be submittedGoogle Scholar