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Fabrication of Ultra High Purity Silicon Single Crystals

Published online by Cambridge University Press:  15 February 2011

D. Itoh ,
S. Kawamoto ,
S. Miki ,
I. Namba  and
Y. Yatsurugi
D. Itoh
Affiliation:
Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Japan 254
S. Kawamoto
Affiliation:
Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Japan 254
S. Miki
Affiliation:
Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Japan 254
I. Namba
Affiliation:
Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Japan 254
Y. Yatsurugi
Affiliation:
Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Japan 254
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Abstract

High resistivity silicon single crystals for radiation detectors were grown by the floating-zone (FZ) method with and without one-pass zone refining of ultra pure starting material obtained by the decomposition of monosilane gas. In this method, boron is removed from monosilane during gas generation. The main residual impurity is phosphorus from phosphine which is removed with zeolite A after distillation of monosilane. Photoluminescence analysis and an improved 4-point probe resistivity measuring method were used to evaluate the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 16: Symposium – F Nuclear Radiation Detector Materials , 1982 , 39
Copyright
Copyright © Materials Research Society 1983

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References

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