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Fabrication of two-dimensional Si/Ge nanowires and nanorings

Published online by Cambridge University Press:  01 February 2011

Midori Kawamura ,
Bert Voigtländer ,
Neelima Paul  and
Vasily Cherepanov
Midori Kawamura
Affiliation:
Institut für Schichten und Grenzflächen, ISG 3, Forschungszentrum Jülich, 52425 Jülich, Germany
Bert Voigtländer
Affiliation:
Institut für Schichten und Grenzflächen, ISG 3, Forschungszentrum Jülich, 52425 Jülich, Germany
Neelima Paul
Affiliation:
Institut für Schichten und Grenzflächen, ISG 3, Forschungszentrum Jülich, 52425 Jülich, Germany
Vasily Cherepanov
Affiliation:
Institut für Schichten und Grenzflächen, ISG 3, Forschungszentrum Jülich, 52425 Jülich, Germany
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Abstract

We show that two-dimensional Si/Ge nanostructures with a thickness of a single atomic layer can be imaged with chemical sensitivity using a scanning tunneling microscope (STM). An atomic layer of Bi terminating the surface is used to distinguish between Si and Ge. This distinction between Si and Ge enabled us to fabricate two-dimensional Si/Ge nanostructures in a controlled way by self-organized growth. Si/Ge nanoring structures consisting of alternating Si and Ge rings having a width of ∼5 nm were grown around a Si core on a Si(111) substrate by molecular beam epitaxy (MBE). The thickness of the Si and Ge rings is only one atomic layer (0.3 nm). Alternating Si/Ge nanowires with a width of ∼3.5 nm and a thickness of 0.3 nm were also fabricated using alternating Si/Ge deposition in the step flow growth mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T1.7
Copyright
Copyright © Materials Research Society 2004

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References

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