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Fabrication Of Sub 30 Nanometer Sheets Of Single Crystalline Silicon

Published online by Cambridge University Press:  10 February 2011

J. G. Flemitng
J. G. Flemitng*
Affiliation:
Sandia National Laboratories, MS 1084, P.O. Box 5800, Albuquerque NM 87185, [email protected]
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Abstract

A relatively simple technique for the fabrication of sub 30 rim thick sheets of perfect single crystalline silicon is described. The thinnest sheets formed were 15 nim thick. The width of the sheets is 300–1000 nmn and the length of the sheets can be tens of microns. The sheets are crystallographically well defined with the thin dimension being bound by atomically smooth {111} planes. The sheets are fabricated using a combination of reactive ion etching and wet KOH etching steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 221
Copyright
Copyright © Materials Research Society 1998

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References

1. Ludwig, M. H., Critical Reviews in Solid State and Materials Sciences 21 p265 (1996).Google Scholar
2. lyer, S. S. and Xie, Y.-H., Science 260 p40 (1993).Google Scholar
3. Guha, S., Pace, M. D., Dunn, D. N. and Singer, I. L., Appl. Phys. Lett. 70. p1207 (1997).Google Scholar
4. Ghislotti, G., Nielsen, B., Asoka-Kumar, P., Lynn, K. G., DiMauro, L. F., Bottani, C. E., Corn, F., Tonini, R. and Ottaviani, G. P., J. Electrochem. Soc. 144 p2196 (1997).Google Scholar
5. Allan, G., Delerue, C. and Lannoo, M., Appl. Phys. Lett. 71 p1189 (1997).Google Scholar
6. Petersen, K. E., Proceedings of the IEEE 70, p420 (1982).Google Scholar
7. Ensell, G., Proceedings of Transducers ‘95 p186 (1995).Google Scholar
8. Namastu, H., Horiguchi, S., Nagase, M. and Kurihara, K., J. Vac. Sci Technol. B 15 p1688 (1997).Google Scholar
9. Liu, H. I., Maluf, N. I., Pease, R. F. W., Biegelsen, D. K., Johnson, N. M. and Ponce, F. A., J. Vac. Sci Technol. B 10. p2846 (1992).Google Scholar