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Fabrication of Semiconductor Nanostructures With an Atomic Force Microscope

Published online by Cambridge University Press:  15 February 2011

E. S. Snow  and
P. M. Campbell
E. S. Snow
Affiliation:
Naval Research Laboratory, Washington, DC 20375
P. M. Campbell
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

An AFM-based nanolithography process is described. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resulting oxide, ∼ 3 nm thick, is used as a mask for selective etching of the unoxidized regions of Si. This AFM-based fabrication process is fast, reliable, simple to perform and is well suited for device fabrication. We apply this technique to the fabrication of Si and GaAs nanostructures, as well as to the fabrication of a nanometer-scale Si side-gated transistor. In addition, we discuss the ultimate resolution limits of the technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 131
Copyright
Copyright © Materials Research Society 1995

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References

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