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Fabrication of Ru/Bi4−xLaxTi3O12/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Taisuke Furukawa ,
Takeharu Kuroiwa ,
Yoshihisa Fujisaki ,
Takehiko Sato  and
Hiroshi Ishiwara
Taisuke Furukawa
Affiliation:
R&D Association for Future Electron Devices, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN
Takeharu Kuroiwa
Affiliation:
R&D Association for Future Electron Devices, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN
Yoshihisa Fujisaki
Affiliation:
R&D Association for Future Electron Devices, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN
Takehiko Sato
Affiliation:
R&D Association for Future Electron Devices, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho Midori-ku, Yokohama 226–8503, JAPAN
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Abstract

A Ru/ Bi 4-xLaxTi 3O12/Ru (Ru/BLT/Ru) capacitor structure with Ru top electrodes deposited by metalorganic chemical vapor deposition (MOCVD) was fabricated. On a Ru film deposited by MOCVD, BLT film was formed by a sol-gel method and crystallized in vacuum. Depositing a conformal Ru film on a BLT/Ru structure by MOCVD, Ru/BLT/Ru stack with smooth and flat surface was successfully formed. Then, ferroelectric Ru/BLT/Ru capacitors were fabricated through a dry etching process. It exhibited both good ferroelectric properties (2Pr =16 μC/cm2) and low leakage current density (J =10−7 A/cm2), suggesting that Ru film deposited by MOCVD showed sufficient properties for the tope electrode of Ru/BLT/Ru structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C7.7
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Furukawa, T., Kuroiwa, T., Fujisaki, Y., Sato, T., and Ishiwara, H., Integrated Ferroelectrics 59 1437 (2003).Google Scholar
2. Furukawa, T., Kuroiwa, T., Fujisaki, Y., Sato, T., and Ishiwara, H., Integrated Ferroelectrics to be published (2003).Google Scholar
3. Sato, T., Kuroiwa, T., and Ishiwara, H., Extended Abstract of 1st International Meeting on Ferroelectric Random Access Memories 168 (2001).Google Scholar