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Fabrication of RR-P3HT-based TFTs using low-temperature PECVD silicon nitride passivation

Published online by Cambridge University Press:  01 February 2011

Sarswati Koul ,
Yuri Vygranenko ,
Flora Li ,
Andrei Sazonov  and
Arokia Nathan
Sarswati Koul
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Yuri Vygranenko
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Flora Li
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Andrei Sazonov
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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Abstract

Regioregular poly(3-hexylthiophene) (RR-P3HT) is a commercially available semiconducting polymer. Its high processability makes it favorable for fabrication of organic thin film transistors (OTFTs). Depending on the processing technique and device configuration, the field effect mobility of this polymer ranges from 0.01 to 0.1 cm2/Vs. The mobility also shows a correlation with the choice of gate dielectric material. The most commonly reported dielectric materials for OTFTs are SiO2, Al2O3 and Ta2O5. In this work, we report a new fully encapsulated top-gate RR-P3HT-based TFT structure with a-SiNx implemented as the gate dielectric and passivation material. The fabrication process enables realization of discrete transistors and transistor circuits through four consecutive photolithographic steps. The process is compatible for various substrates including Corning glass, Si wafers, and any appropriate plastic substrates. This paper addresses a number of critical technological issues such as substrate surface treatment to improve film adhesion, optimal spin coating conditions for uniform polymer film formation, preparation of device quality a-SiNx films by plasma-enhanced chemical vapor deposition (PECVD) at 75°C substrate temperature, and a tailored etch process for patterning of the polymer film. Current-voltage characteristics of the fabricated transistors are analyzed to evaluate the quality of the polymer/a-SiNx interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I9.4
Copyright
Copyright © Materials Research Society 2005

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