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Fabrication of PZT Based Capacitor with SrRuO3 Electrode for Memory Device Applications

Published online by Cambridge University Press:  10 February 2011

Ashok Kumar ,
H. Rahman  and
M. Shamsuzzoha
Ashok Kumar
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical and Computer Engineering, University of South Alabama, Mobile, AL 36688
H. Rahman
Affiliation:
Advanced Thin Film Laboratory, Department of Electrical and Computer Engineering, University of South Alabama, Mobile, AL 36688
M. Shamsuzzoha
Affiliation:
Department of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL, 35487
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Abstract

Strontium ruthenium oxide (SrRuO3) was deposited on Pt/(100)Si substrates at varying temperatures and 300 mTorr oxygen pressure using the pulsed laser deposition method and was found to be highly crystalline and textured when deposited over 450°C. After achieving highly crystalline SrRuO3 films, capacitors using the ferroelectric material - PZT (PbZr0.5Ti0.48O3) were successfully fabricated on Pt/(100)Si substrates. The ferroelectric properties of the films were determined by the RT66A Standardized Ferroelectric Test System. The structural properties of the films were analyzed by X-ray diffraction. Transmission electron microscopy was used to determine the crystallinity and quality of interfaces among different layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 153
Copyright
Copyright © Materials Research Society 1999

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References

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