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Fabrication of Piezoelectric ZnO and PZT Films for FPW Device

Published online by Cambridge University Press:  26 February 2011

Sang Hoon Yoon  and
Dong-Joo Kim
Sang Hoon Yoon
Affiliation:
[email protected], Auburn University, Materials Engineering, 201 Ross Hall, Auburn, AL, 36849, United States, 1-334-329-8700, 1-334-844-3400
Dong-Joo Kim
Affiliation:
[email protected], Auburn University, Materials Research and Education center, 201 Ross Hall, Auburn, AL, 36849, United States
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Abstract

Piezoelectric ZnO and PZT films for acoustic wave device have been investigated. The films used for acoustic wave devices require textured structure, high piezoelectric coefficients, and high electromechanical coupling coefficients, because the piezoelectric films launch and receive the acoustic wave. We fabricated ZnO films by RF magnetron sputtering, and PZT films by chemical solution deposition (CSD). Results showed that uniform, dense and highly textured films were obtained under optimal process parameters. The film texture was controlled by modifying process parameters, such as gas kinds, gas ratio, and substrate type for sputtered ZnO films, and the presence of chelating agent, temperature of heat treatment, and substrate type for solution derived PZT films. Flexural plate wave (FPW) device has been successfully integrated onto 4-inch silicon wafers with optimized piezoelectric films.

Keywords

piezoelectricsol-gelsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T07-07
Copyright
Copyright © Materials Research Society 2007

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References

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