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The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation
Published online by Cambridge University Press: 01 February 2011
Abstract
We report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.
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- Copyright © Materials Research Society 2004