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Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

Published online by Cambridge University Press:  17 March 2011

H. Miyake ,
H. Mizutani ,
K. Hiramatsu ,
Y. Iyechika ,
Y. Honda  and
T. Maeda
H. Miyake
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
H. Mizutani
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
K. Hiramatsu
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
Y. Iyechika
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
Y. Honda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
T. Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
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Abstract

GaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.3
Copyright
Copyright © Materials Research Society 2001

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References

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