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Fabrication of Encapsulated Indium Films for Melting Experiments

Published online by Cambridge University Press:  25 February 2011

John H. Scofield ,
R. W. Epworth  and
D. M. Tennant
John H. Scofield
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
R. W. Epworth
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
D. M. Tennant
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
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Abstract

We describe the fabrication of submicron, multiprobe thin indium film conductors for electrical measurments above their melting transition. Problems unique to handling liquid films were overcome by using tri-level Si3N4/In/W structures. Tungsten (W) leads made good electrical contact to, yet did not alloy With the liquid indium (In). A silicon-nitride (Si3N4 ) encapsulating layer deposited over the In/W devices prevented the indium from forming islands when liquid. Indium wires were fabricated using e-beam lithography and liftoff. Low temperature reactive sputtering technique was used to deposit the Si3N4 without melting the indium. The technique could be easily adapted to use with other low melting point materials.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 85
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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