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Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

J.B. Posthill
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
D.P. Malta
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
T.P. Humphreys
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
G.C. Hudson
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
R.E. Thomas
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
R.A. Rudder
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
R.J. Markunas
Affiliation:
Research Triangle institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

Using a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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