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Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

Published online by Cambridge University Press:  21 March 2011

Hitoshi Umezawa ,
Yoshikazu Ohba ,
Hiroaki Ishizaka ,
Takuya Arima ,
Hirotada Taniuchi ,
Minoru Tachiki  and
Hiroshi Kawarada
Hitoshi Umezawa
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Yoshikazu Ohba
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Hiroaki Ishizaka
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Takuya Arima
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Hirotada Taniuchi
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Minoru Tachiki
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
Hiroshi Kawarada
Affiliation:
School of Science and Engineering, Waseda University, Okubo 3-4-1 Shinjuku-ku, Tokyo 169-8555, Japan CREST, JST (Japan Science and Technology Corporation), Yon ban 5-3, Chiyoda, Tokyo 102-0081, Japan
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Abstract

Analysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E8.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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