Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T14:54:32.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays

Published online by Cambridge University Press:  01 July 2011

Shih-Pang Chang ,
Jet-Rung Chang ,
Ji-Kai Huang ,
Jinchai Li ,
Yi-Chen Chen ,
Kuok-Pan Sou ,
Yun-Jing Li ,
Hung-Chih Yang ,
Ta-Cheng Hsu  and
Tien-Chang Lu
...Show all authors
Shih-Pang Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Jet-Rung Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Ji-Kai Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Jinchai Li
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan Department of Physics, Xiamen University, Xiamen 361005, China
Yi-Chen Chen
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Kuok-Pan Sou
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Yun-Jing Li
Affiliation:
Institute of Lighting and Energy Photonics, National Chiao Tung University at Tainan, Taiwan
Hung-Chih Yang
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Ta-Cheng Hsu
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Tien-Chang Lu
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Chun-Yen Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Get access

Abstract

We report that the high crystalline and high efficiency green emission semipolar {101̅1} InGaN/GaN multiple quantum wells (MQWs) grown on the {101̅1} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {101̅1} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {101̅1} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {101̅1} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {101̅1} planes are promising for solving the efficiency green gap of III-nitride light emitters.

Keywords

epitaxyoptical propertiesnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d11-06
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Walukiewicz, J.W.W, Yu, K., Ager, J., Haller, E., Lu, H., and Schaff, H., Appl. Phys. Lett. 80, 4741 (2002).Google Scholar
[2] Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., and Bedair, S. M., Appl. Phys. Lett. 90, 151109 (2007).Google Scholar
[3] Masui, H., Nakamura, S., DenBaars, S. P., and Mishra, U. K., IEEE Trans Electron Devices vol. 57, pp. 88, 2010.Google Scholar
[4] Lee, Y. J., Lin, S. Y., Chiu, C. H., Lu, T.C, Kuo, H. C., Wang, S. C., Chhajed, S., Kim, J. K., and Schurbert, E. F., Appl. Phys. Lett. 94, 141111 (2009).Google Scholar
[5] Lin, H.W., Lu, Y.J., Chen, H.Y., Lee, H.M., and Gwo, S.J., Appl. Phys. Lett. 97, 073101 (2010).Google Scholar
[6] Sekiguchi, H., Kishino, K., and Kikuchi, A., Appl. Phys. Lett. 96, 231104 (2010).Google Scholar
[7] Chen, G. T., Chang, S. P., Chyi, J. I. and CHang, M. N., Appl. Phys. Lett. 92, 241904 (2008).Google Scholar
[8] Hiramatsu, K., Nishiyama, K., Onishi, M., Mizutani, H., Motogaito, A., Miyake, H., Iyechika, Y., Maeda, T., J. Crystal Growth 221, 316 (2000).Google Scholar
[9] Lee, Y. J., Chiu, C. H., Ke, C. C., Lin, P. C., Lu, T. C., Kuo, H. C., and Wang, S. C., IEEE J Sel. Top. Quantum Electron vol. 15, No. 4, pp. 1137–1143 (2009).Google Scholar
[10] Chtanov, A., Baars, T., and Gal, M., Phys. Rev. B 53, 4704 (1996)Google Scholar
[11] Sasaki, A., Shibakawa, S. I., Kawakami, Y., Nishizuka, K., Narukawa, Y., and Mukai, T, Jpn. J. Appl. Phys. 45, 8719 (2006).Google Scholar