Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T13:16:48.598Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Modeling of Gated Field-Emission Devices Using Carbon Nanotubes on Si Substrates

Published online by Cambridge University Press:  01 February 2011

Javad - Koohsorkhi ,
Shams - Mohajerzadeh ,
Yaser - Abdi  and
Pouya - Hashemi
Javad - Koohsorkhi
Affiliation:
[email protected], University of Tehran, Electrical and Computer Eng., NOrth Kargar Ave,, Tehran, Iran, Tehran, 14395/515, Iran, +98-21 88 01 12 35, +98-21 88 01 12 35
Shams - Mohajerzadeh
Affiliation:
[email protected], University of Tehran, Electrical and Computer Eng., NOrth Kargar Ave,, Tehran, Iran, Tehran, 14395/515, Iran, +98-21 88 01 12 35, +98-21 88 01 12 35
Yaser - Abdi
Affiliation:
[email protected], University of Tehran, Electrical and Computer Eng., NOrth Kargar Ave,, Tehran, Iran, Tehran, 14395/515, Iran, +98-21 88 01 12 35, +98-21 88 01 12 35
Pouya - Hashemi
Affiliation:
[email protected], University of Tehran, Electrical and Computer Eng., NOrth Kargar Ave,, Tehran, Iran, Tehran, 14395/515, Iran, +98-21 88 01 12 35, +98-21 88 01 12 35
Get access

Abstract

We report fabrication and modeling of self-defined gated filed-emission devices based on encapsulated vertically aligned carbon nanotubes grown on Si substrates with a PECVD method. The electrical characteristics of such devices have been theoretically modeled using an expanded Fowler-Nordheim tunneling effect. Devices fabricated here, resemble vacuum tubes where CNTs act as cathode. They show a saturation behavior for large distances between anode and cathode electrodes, making them suitable for transistor applications. The physical properties of the CNTs were investigated using SEM, evidencing the evolution of vertical CNTs with a tip-growth mechanism. The triode structure proposed in this paper uses CNT as the field-emission electrode (cathode), the surrounding Cr as the gate and a second Si substrate as the anode electrode. The emission current from the nanotube tips is significantly controlled by applying a negative voltage between CNT and the gate. The effect of the anode-cathode and gate-cathode voltages on the emission current has been experimentally observed and theoretically modeled using an expanded F-N effect.

Keywords

plasma-enhanced CVD (PECVD) (deposition)field emissionelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q20-52
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iiijima, S., Helical microtubule of graphitic carbon, Nature, 354, 56–58, (1991)Google Scholar
2. Takikawa, H, Ikeda, M, Hirahara, K, Hibi, Y, Tao, Y, Ruiz, Jr. Fabrication of single-walled carbon nanotubes and nanohorns by means of a torch arc in open air. Physica B: Condensed Matter 2002, 323(1):277–279.Google Scholar
3. Javey, A, Kim, H, Brink, M, Wang, Q, Ural, A, Guo, J. et.al. High- κ-dielectrics for advanced carbon nanotube transistors and logic gates. Nature Materials, 2002, 1(4):241–246.Google Scholar
4. Mintmire, JW, White, CT. “Universal density of states for carbon nanotubes”, Phys. Rev. Lett. 1998, 81(12):2506–2508.Google Scholar
5. Ch. Postma, HW, Teepen, T, Yao, Z, Grifoniu, M, Dekker, C. “Carbon nanotube singleelectron transistors at room temperature”, Science 2001, 292(5527):76–79.Google Scholar
6. Burke, P.J., “An RF Circuit Model for Carbon Nanotubes”, IEEE Nano, 393–396, 2002 Google Scholar
7. Franklin, RN, Wang, Q, Tombler, T, Javey, A, Shim, M, Dai, H. “Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems”, Appl. Phys. Lett 2002, 81(5):913–915.Google Scholar
8. Guo, J, Datta, S, Lundstrom, M, Brink, M, McEuen, P, Javey, A, et.al. “Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors” International Electron Device Meeting 2002, 711–714.Google Scholar
9. Javey, A, Guo, J, Wang, Q, lundstrom, M, Dai, H. “Ballistic carbon nanotube field-effect transistors” Nature, 2003; 424(6949):654–657 Google Scholar
10. Arvan, B, Khakifirooz, A, Tarighat, R, Mohajerzadeh, S, Goodarzi, A, Asl. Soleimani, E. et.al. “Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4”, Material Science and Engineering B 2003; 109(1):17–230.Google Scholar
11. de Heer, W.A., Bonard, J.-M., Stockli, T., Chatelain, A., Forro, L., Ugarte, D.; “Carbon nanotube films: electronic properties and their application as field emitters” Z. Phys. D 1997, 40, 418–420 Google Scholar
12. N., De Jonge, N.; J.-M., Bonard, “Carbon nanotube electron sources and applications” Philosophical Transactions of the Royal Society London, Series A ; 2004, . 362, p 2239–66.Google Scholar
13. Y., Abdi, S., Mohajerzadeh, H., Hoseinzadegan and J., Koohsorkhi, “PECVD-grown Carbon-Nanotubes on silicon substrates and their applications for nano-lithography”, Appl. Phys. Lett. 88, p053124, 2006.Google Scholar