Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T07:35:45.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Lasing Properties of Single-Crystalline Semiconductor Microspheres with Anisotropic Crystal Structures

Published online by Cambridge University Press:  11 February 2015

Shinya Okamoto ,
Satoshi Ichikawa ,
Yosuke Minowa  and
Masaaki Ashida
Shinya Okamoto
Affiliation:
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Satoshi Ichikawa
Affiliation:
Institute for NanoScience Design, Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Yosuke Minowa
Affiliation:
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Masaaki Ashida
Affiliation:
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Get access

Abstract

We fabricated single-crystalline microspheres of wide-gap semiconductors with anisotropic crystal structures, such as ZnO and ZnSe, by laser ablation in superfluid helium and investigated their lasing properties. Whispering gallery mode lasing at their band edges in ultraviolet region was clearly observed under the optical excitation, reflecting their high sphericity and crystal quality.

Keywords

optical propertiesmicrostructurelaser ablation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t08-02
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Vahala, K. J., Nature 424, 839 (2003).CrossRefGoogle Scholar
Vernooy, D. W., Ilchenko, V. S., Mabuchi, H., Streed, E. W., and Kimble, H. J., Opt. Lett. 23, 247 (1998).CrossRefGoogle Scholar
Kuwata-Gonokami, M., Takeda, K., Yasuda, H. and Ema, K., Jpn. J. Appl. Phys. 31, 99 (1992).CrossRefGoogle Scholar
Nagai, M., Hoshino, F., Yamamoto, S., Shimano, R., and Kuwata-Gonokami, M., Opt. Lett. 22, 1630 (1997).CrossRefGoogle Scholar
Okamoto, S., Inaba, K., Iida, T., Ishihara, H., Ichikawa, S. and Ashida, M., Sci. Rep. 4, 5186 (2014).CrossRefGoogle Scholar
Okamoto, S., Minowa, Y., Ashida, M., Proc. SPIE. 8263, 82630K (2012).CrossRefGoogle Scholar
Okamoto, S., Ichikawa, S., Minowa, Y. and Ashida, M., Mater. Res. Soc. Symp. Proc. 1635, 103 (2013).Google Scholar
Vanheusden, K., Seager, C. H., Warren, W. L., Tallant, D. R., Caruso, J., Hampden-Smith, M. J., Kodas, T. T., J. Lumin. 75, 11 (1997).CrossRefGoogle Scholar
Tsukazaki, A., Ohtomo, A., Onuma, T., Ohtani, M., Makino, T., Sumiya, M., Ohtani, K., Chichibu, S. F., Fuke, S., Segawa, Y., Ohno, H., Koinuma, H., and Kawasaki, M., Nature Mater. 4, 42 (2005).CrossRefGoogle Scholar
Wang, J. S., Chen, W. J., Yang, C. S., Tsai, Y. H., Wang, H. H., Chen, R. H., Shen, J. L., and Tsai, C. D., Appl. Phys. Lett. 98, 021908 (2011).CrossRefGoogle Scholar
Li, Q., Gong, X., Wang, C., Wang, J., Ip, K., and Hark, S., Adv. Mater. 16, 1436 (2004).CrossRefGoogle Scholar
Cai, Y., Chan, S. K., Sou, I. K., Chan, Y. F., Su, D. S., and Wang, N., Adv. Mater. 18, 109 (2006).CrossRefGoogle Scholar
Ji, Wenyu, Jing, Pengtao, Wei Xu, Xi Yuan, Wang, Yunjun, Zhao, Jialong, and Jen, Alex K.-Y., Appl. Phys. Lett. 103, 053106 (2013).CrossRefGoogle Scholar
Collier, C. M. and Holzman, J. F., Appl. Phys. Lett. 104, 042101 (2014).CrossRefGoogle Scholar
Yeh, C. Y., Lu, Z. W., Froyen, S., and Zunger, A., Phys. Rev. B. 46, 10086 (1992).CrossRefGoogle Scholar
Grier, D. G., Nature 424, 810 (2003).CrossRefGoogle Scholar