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Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Published online by Cambridge University Press:  21 March 2011

B. Shen ,
W. P. Li ,
X. S. Wang ,
F. Yan ,
R. Zhang ,
Z. X. Bi ,
Y. Shi ,
Z. G. Liu ,
Y. D. Zheng  and
T. Someya
...Show all authors
B. Shen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
W. P. Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
X. S. Wang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
F. Yan
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
R. Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
Z. X. Bi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
Y. Shi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
Z. G. Liu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
Y. D. Zheng
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
T. Someya
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8904, Japan.
Y. Arakawa
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8904, Japan.
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Abstract

An AlxGa1-xN/GaN-based metal-ferroelectric-semiconductor (MFS) structure is developed by depositing a Pb(Zr0.53Ti0.47)O3 film on a modulation-doped Al0.22Ga0.78N/GaN heterostructure. In high-frequency capacitance-voltage (C-V) measurements, the sheet concentration of the two-dimensional electron gas at the Al0.22Ga0.78N/GaN interface in the MFS structure decreases from 1.56 × 1013cm-2to 5.6 × 1012cm-2under the –10 V applied bias. A ferroelectric C-V window of 0.2 V in width near –10V bias is observed, indicating that the AlxGa1-xN/GaN MFS structure can achieve memory performance without the reversal of the ferroelectric polarization. The results indicate that AlxGa1-xN/GaN heterostructures are promising semiconductor channel candidates for MFS field effect transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.41.1
Copyright
Copyright © Materials Research Society 2002

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