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Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures
Published online by Cambridge University Press: 21 March 2011
Abstract
An AlxGa1-xN/GaN-based metal-ferroelectric-semiconductor (MFS) structure is developed by depositing a Pb(Zr0.53Ti0.47)O3 film on a modulation-doped Al0.22Ga0.78N/GaN heterostructure. In high-frequency capacitance-voltage (C-V) measurements, the sheet concentration of the two-dimensional electron gas at the Al0.22Ga0.78N/GaN interface in the MFS structure decreases from 1.56 × 1013cm-2to 5.6 × 1012cm-2under the –10 V applied bias. A ferroelectric C-V window of 0.2 V in width near –10V bias is observed, indicating that the AlxGa1-xN/GaN MFS structure can achieve memory performance without the reversal of the ferroelectric polarization. The results indicate that AlxGa1-xN/GaN heterostructures are promising semiconductor channel candidates for MFS field effect transistors.
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- Copyright © Materials Research Society 2002
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