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Fabrication and Electronic Characteristics of Silicon Nanowire MOSFETs

Published online by Cambridge University Press:  01 February 2011

Hironori Yoshioka ,
Yuichiro Nanen ,
Jun Suda  and
Tsunenobu Kimoto
Hironori Yoshioka
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan, +81-75-383-2302, +81-75-383-2303
Yuichiro Nanen
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
Jun Suda
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
Tsunenobu Kimoto
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
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Abstract

The n-type silicon nanowire MOSFETs with a nanowire shape being triangular or trapezoidal, have been fabricated on SOI substrates and characterized. The height and bottom-width of the triangular nanowire has been 10 nm and 19 nm, respectively. The devices have shown good gate control, such as a nearly ideal subthreshold slope of 63 mV/decade, high Ion/Ioff ratio of 107, and small drain-induced barrier lowering of 5 mV/V at room temperature. The low field mobility of triangular nanowire has been estimated to be 130 cm2/V·s and shown no difference with the change of the nanowire shape and direction within the investigated range.

Keywords

nanostructureSielectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O12-02
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Singh, N., Agarwal, A., Bera, L. K., Liow, T. Y., Yang, R., Rustagi, S. C., Tung, C. H., Kumar, R., Lo, G. Q., Balasubramanian, N. and Kwong, D. L., IEEE Electron Device Letters 27, 383 (2006).Google Scholar
2. Cho, K. H., Suk, S. D., Yeoh, Y. Y., Li, M., Yeo, K. H., Kim, D., Park, D., Lee, W., Jung, Y. C., Hong, B. H., Hwang, S. W., IEEE Electron Device Letters 28, 1129 (2007).Google Scholar
3. Majima, H., Ishikuro, H. and Hiramoto, T., IEEE Electron Device Letters 21, 396 (2000).Google Scholar
4. Colinge, J., Quinn, A. J., Floyd, L., Redmond, G., Alderman, J. C., Xiong, W., Cleavelin, C. R., Schulz, T., Schruefer, K., Knoblinger, G and Patruno, P., IEEE Electron Device Letters 27, 120 (2006).Google Scholar
5. Lundstrom, M. S. and Guo, J., NANOSCALE TRANSISTORS Devie Physics, Modeling and Simulation, (Springer, 2006) pp.3–6.Google Scholar
6. He, R. and Yang, P., Nature Nanotechnology 1, 42 (2006).Google Scholar
7. Uchida, K. and Takagi, S., Applied Physics Letters 28, 2916 (2003).Google Scholar
8. Ghibaudo, G., Electronics Letters 24, 543 (1988).Google Scholar
9. Sabnis, A. G. and Clemens, J. T., IEEE Tech. Dig. Int. Electron Device Meet., 18 (1979).Google Scholar
10. Takagi, S., Toriumi, A., Iwase, M. and Tango, H., IEEE Transactions on Electron Devices 41, 2357 (1994).Google Scholar