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Fabrication and Electrical Studies of P(VDF/TrFE)(72/28) Copolymer based Non-Volatile Memory Devices as a Function of Varying Device Structures

Published online by Cambridge University Press:  01 February 2011

Kap Jin Kim ,
Chang Woo Choi ,
Arun Anand Prabu  and
Sun Yoon
Kap Jin Kim
Affiliation:
[email protected], Kyung Hee University, Advanced Polymer and Fiber Materials, Seocheon-dong 1, Gigeung-gu, Yongin, 446-701, Korea, Republic of, +82-31-201-2518, +82-31-204-8114
Chang Woo Choi
Affiliation:
[email protected], Kyung Hee University, Advanced Polymer and Fiber Materials, 1 Seocheon-dong, Giheung-gu, Yongin, Gyeonggi-do, 446-701, Korea, Republic of
Arun Anand Prabu
Affiliation:
[email protected], Kyung Hee University, Advanced Polymer and Fiber Materials, 1 Seocheon-dong, Giheung-gu, Yongin, Gyeonggi-do, 446-701, Korea, Republic of
Sun Yoon
Affiliation:
[email protected], Kyung Hee University, Advanced Polymer and Fiber Materials, 1 Seocheon-dong, Giheung-gu, Yongin, Gyeonggi-do, 446-701, Korea, Republic of
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Abstract

Ferroelectric characteristics of poly(vinylidiene fluoride/trifluoroethylene) (P(VDF/TrFE) (72/28 mol%)) copolymer ultrathin films used as an insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and organic field-effect transistor (OFET) were studied using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Capacitance-voltage measured using MFIS was found to be more suitable for distinguishing the ‘0’ and ‘1’ state compared to MFM device structure. In OFET, the decreasing channel length increased the measured drain current (Id) values as well as its memory window enabling easier identification of the ‘0’ and ‘1’ state comparable to MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices with faster data R/W/E speed and memory retention capacity.

Keywords

memoryferroelectricitythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-08
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Kawai, H. Jpn. J. Appl. Phys. 8, 975 (1969).Google Scholar
2. Evans, J. T. and Womack, R. IEEE J. Solid-State Circuits 23, 1171, (1998).Google Scholar
3. Bune, A. Fridkin, V. Ducharme, S. Blinov, L. Palto, S. Sorokin, A. V. Yudin, S. and Zlatkin, A. Nature 391, 874 (1998).Google Scholar
4. Xia, F. Razavi, B. Xu, H. Cheng, Z. Y. and Zhang, Q. M. J. Appl. Phys. 92, 3111 (2002).Google Scholar
5. Tsutsumi, N. Ueyasu, A. Sakai, W. and Chiang, C. K. Thin Solid Films, 483, 340 (2005).Google Scholar
6. Zhang, Q. M. Xu, H. Fang, F. Xia, F. and You, H. J. Appl. Phys. 89, 2613 (2001).Google Scholar
7. Tashiro, K. and Tanaka, R. Polymer, 47, 5433 (2006).Google Scholar
8. Prabu, A. A. Lee, J. S. Kim, K. J. and Lee, H. S. Vib. Spec. 41, 1 (2006).Google Scholar
9. Lee, J. S. Kim, K. J. and Prabu, A. A. Solid State Phenomena, 124-126, 303 (2006).Google Scholar
10. Lee, J. S. Prabu, A. A. Chang, Y. M. and Kim, K. J. Macromol. Symp. 249-250, 13 (2007).Google Scholar
11. Prabu, A. A. Kim, K. J. and Park, C. Vib. Spec. under revision (2008).Google Scholar
12. Fujisaki, S. Ishiwara, H. and Fujisaki, Y. Appl. Phys. Lett. 90, 162902 (2007).Google Scholar