Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:44:51.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Electrical Characterization of Silicon Nanowire Arrays

Published online by Cambridge University Press:  01 February 2011

Sarah M. Dilts ,
Ahmad Mohmmad ,
Kok-Keong Lew ,
Joan M. Redwing  and
Suzanne E. Mohney
Sarah M. Dilts
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Ahmad Mohmmad
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Kok-Keong Lew
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Joan M. Redwing
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Suzanne E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

High density boron-doped silicon nanowire arrays were fabricated within the pores of anodized alumina membranes via vapor-liquid-solid (VLS) growth Anodized alumina membranes with a nominal pore diameter of 200 nm served as templates for the sequential electrodeposition of silver, cobalt, and gold which served as the backside electrical contact, ohmic contact metal and catalyst metal for VLS growth, respectively. Boron-doped silicon nanowires were then synthesized within the pores by VLS growth using silane (SiH4) and trimethylboron (TMB) gas sources. Arrays of Al dots were deposited on the top surface of the membrane after nanowire growth. A series of samples was prepared with different SiNW lengths and boron doping levels. Two point probe measurements were used to measure the I-V characteristics of the silicon nanowire arrays before and after annealing. Nanowire resistivity and contact resistance were determined from plots of resistance versus nanowire length. The resistivity of the SiNW was observed to decrease with the addition of TMB during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F9.10
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yu, J.Y., Chung, S.W. and Heath, J.R., J. Phys. Chem. B 104, 11864 (2000).Google Scholar
2. Cui, Y., Duan, X., Hu, J. and Lieber, C.M., J. Phys. Chem. B 104, 5213 (2000).Google Scholar
3. Cui, Y., Zhong, Z., Wang, D., Wang, W.U. and Lieber, C.M., Nanolett. 3, 149 (2003).Google Scholar
4. Huang, Y., Duan, X., Wei, Q. and Lieber, C.M., Science 291, 630 (2001).Google Scholar
5. Lew, K.K., Pan, L., Bogart, T.E., Dilts, S.M., Dickey, E.C., Redwing, J.M., Wang, Y.F., Cabassi, M. and Mayer, T.E., Appl. Phys. Lett. 85, 3101 (2004).Google Scholar
6. Al-Mawlawi, D., Liu, C.Z. and Moskovits, M., J. Mater. Res. 9, 1014 (1994).Google Scholar
7. Martin, C.R., Science 266, 1961 (1994).Google Scholar
8. Lew, K.K., Reuther, C., Carim, A.H. and Redwing, J.M., J. Vac. Sci. Tech. B 20, 389 (2002).Google Scholar
9. Bogart, T.E., Dey, S., Lew, K.K., Mohney, S.E. and Redwing, J.M., Adv. Mater., in press.Google Scholar
10. Mohammad, A.M., Dey, S., Lew, K.K., Redwing, J.M. and Mohney, S.E., J. Electrochem. Soc. 150, G577 (2003).Google Scholar
11. Lew, K.-K. and Redwing, J.M., Journal of Crystal Growth 254, 14 (2003).Google Scholar