Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T00:53:29.839Z Has data issue: false hasContentIssue false

Fabrication and Characterization Studies of Semiconductor-Impregnated Porous Vycor Glass

Published online by Cambridge University Press:  21 February 2011

C. A. Huber
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
T. E. Huber
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
A. P. Salzberg
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
J. A. Perez
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
Get access

Abstract

Porous Vycor glass has been impregnated with semiconductors by pressure forcing the nonwetting semiconductor melt into the interconnected pores. Dense semiconductor mesh-like microstructures with a characteristic size of 50 Å can be fabricated by this technique. Measurements are reported which show the composites are suitable for both optical and transport studies, particularly those addressing quantum confinement of carriers and unusual electrical transport phenomena in this new class of materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Brus, L.E., J. Phys. Chem. 90, 2555 (1986); C.J. Sandroff, D.M. Hwang, and W.M. Chung, Phys. Rev. B33, 5953 (1986).Google Scholar
2. Borrelli, N.F., Hall, D.W., Holland, H.J., and Smith, D.W., J. Appl. Phys. 62, 5299 (1987).Google Scholar
3. Wang, Y., Suna, A., Mahler, W., and Kasowski, R., J. Chem. Phys. 87, 7315 (1987).Google Scholar
4. Bogomolov, V. N., Poborchii, V.V., Kholodkievich, S.V., and Shagin, S.I., Pis'ma Zh. Eksp. Teor. Fiz. 38, 439 (1983) [Soy. Phys. JETP Lett. 38, 533 (1983)]; Y.Wang and N. Herron, J. Phys. Chem. 91, 257 (1987).Google Scholar
5. Luong, J.C., Superlatt. and Microstruc. 4, 385 (1988).Google Scholar
6. Watson, J.H.P., Phys. Rev. 148, 223 (1966).Google Scholar
7. Elmer, T.H., Chapman, I.D., and Nordberg, M.E., J. Phys. Chem. 66, 1517 (1962).Google Scholar
8. Huber, T.E. and Huber, C.A., J. Phys. Chem., in press (1990).Google Scholar
9. See, for example, Adamson, A.W., Physical Chemistry of Surfaces (Wiley, New York, 1982), p. 338.Google Scholar
10. Glazov, V.M., Chizhevskaya, S.N., and Glageleva, N.N., Liquid Semiconductors (Plenum, New York, 1969).Google Scholar
11. Huber, C.A. and Huber, T.E., J. Appl. Phys. 64, 6588 (1988).Google Scholar
12. Klug, H.P. and Alexander, L.A., X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials (Wiley, New York, 1954).Google Scholar
13. Efros, Al.L. and Efros, A.L., Fiz. Tekh. Poluprovodn. 16, 1209 (1982) [Soy. Phys. Semicond 16, 772 (1982)]; E. Hanamura, Phys. Rev. B37, 1273 (1988).Google Scholar