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Fabrication and Characterization of Wafer-Bonded GaInAsSb Epitaxy for Monolithically Interconnected Thermophotovoltaic Devices

Published online by Cambridge University Press:  01 February 2011

C.A. Wang ,
D.A. Shiau ,
P.G. Murphy ,
P.W. O'Brien ,
R.K. Huang ,
M.K. Connors ,
A.C. Anderson ,
D.M. Depoy ,
G. Nichols  and
M.N. Palmisiano
C.A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
D.A. Shiau
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
P.G. Murphy
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
P.W. O'Brien
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
R.K. Huang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
M.K. Connors
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
A.C. Anderson
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
D.M. Depoy
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
G. Nichols
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
M.N. Palmisiano
Affiliation:
Bechtel Incorporated, West Mifflin, PA 15122
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Abstract

The fabrication, characterization, and performance of wafer-bonded (WB) GaInAsSb thermophotovoltaic (TPV) devices for monolithically series-interconnected cells are reported. TPV epilayers were bonded to GaAs handle wafers with SiOx/Ti/Au. This dielectric/metal layer is multi-functional in that it is used as the adhesive to bond the epilayers; it provides electrical isolation; and it is an internal back surface reflector. Considerations were made to minimize residual stress and provide high reflectivity. Excellent structural and optical properties of WB TPV structures are observed. The external quantum efficiency of WB and unbonded TPV cells is comparable. TPV cells were monolithically series interconnected, and a 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B2.7
Copyright
Copyright © Materials Research Society 2003

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