Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-20T00:31:09.706Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and characterization of GaN nanopillar arrays

Published online by Cambridge University Press:  01 February 2011

Y.D. Wang ,
S. Tripathy ,
S.J. Chua  and
C.G. Fonstad
Y.D. Wang
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576
S. Tripathy
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S.J. Chua
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576 Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
C.G. Fonstad
Affiliation:
Singapore-MIT Alliance, E4–04–10, 4 Engineering Drive 3, Singapore 117576 Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA 02139
Get access

Abstract

Various nanofabrication technologies are currently under investigation to realize fine patterning of III-Nitrides. Dry and wet etching techniques have been explored in the past for the fabrication of GaN-based devices. However, due to etch-induced damage, it is still a major challenge to achieve high-quality GaN-based nanostructures with high aspect ratio. In this study, GaN nanopillars were fabricated by inductively coupled plasma etching (ICP) using anodic aluminium oxide (AAO) as a mask. High-spatial resolution optical techniques were employed to characterize these pillar arrays. The average diameter and length of these pillars are about 60–70 nm and 350–400 nm, respectively. Low temperature micro-photoluminescence spectra show a red shift compared with the spectrum recorded from the as-grown GaN, indicating stress relaxation in these nanopillars. The evidence of good crystalline quality is also confirmed by micro-Raman measurement where red shift of the E2(TO) mode from GaN nanopillars suggest partial relaxation of the compressive strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.5
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Jpn. J. Appl. Phys. 36, L1059 (1997).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Hiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys. 36, L1568 (1997).Google Scholar
3. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
4. Huang, Y., Duan, X., Cui, Y., and Lieber, C.M., Nano Lett. 2, 101 (2001)Google Scholar
5. Han, W., Fan, S., Li, Q., and Hu, Y., Science 277, 1287 (1997)Google Scholar
6. Tiginyanu, I.M., Ursake, V.V., Zalamai, V.V., Langa, S., Hubbard, S., Pavlidis, D., and Foll, H., Appl. Phys.Lett. 83, 1551 (2003)Google Scholar
7. Demangeot, F., Gleize, J., Frandon, J., Renucci, M.A., Kuball, M., Peyrade, D., manin- Ferlazzo, L., Chen, Y., and Grandjean, N., J. Appl.Phys. 91, 6520 (2002)Google Scholar
8. Jianyu, L., Hope, C., Yin, A., and Xu, J., J. Appl. Phys. 91, 2544 (2002).Google Scholar
9. Crouse, D., Lo, Y.H., Miller, A.E. and Crouse, M., Appl. Phys. Lett. 76, 49 (2000).Google Scholar
10. Sander, M. S. and Tan, L.S., Adv. Funct. Mater 13, 393 (2003).Google Scholar
11. Masuda, H., Yamada, H., Satoh, M., Asoh, H., Nakao, M., Tamamura, Appl. Phys. Lett. 71, 2770 (1997)Google Scholar
12. Inoue, Y., Hoshino, T., Takeda, S., et.al., Appl. Phys. Lett. 85. 2340 (2004)Google Scholar
13. Wang, Y.D., Chua, S.J., Tripathy, S., Sander, M.S., Chen, P., and Fonstad, C.G., Appl.Phys.Lett. 86, 071917 (2005)Google Scholar