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Fabrication and Characterization of GaAs Tunnel Diode and ErAs Nanoparticles Enhanced GaAs Tunnel Diode for Multijunction Solar Cell

Published online by Cambridge University Press:  09 May 2014

Tomah Sogabe ,
Yasushi Shoji ,
Mitsuyoshi Ohba ,
Naito Shunya ,
Naoya Miyashita ,
Chao-Yu Hung ,
Akio Ogura  and
Yoshitaka Okada
Tomah Sogabe
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Yasushi Shoji
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Mitsuyoshi Ohba
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Naito Shunya
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Naoya Miyashita
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Chao-Yu Hung
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Akio Ogura
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Yoshitaka Okada
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
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Abstract

We report here the fabrication and characterization of GaAs tunnel diode (TD) and ErAs nanoparticles (Nps) enhanced GaAs TD. Four GaAs TDs with different contact area were fabricated by using MOCVD. We found extremely high peak current density of ∼250A/cm2 for the TD with r=0.25mm contact area. Moreover a hysteresis loop was appeared during sweeping up and sweeping down the external voltage. A ‘vector load line model’ was proposed to explain the origin of the shape of the hysteresis loop and the onset of the bistability occurred at the intersect of the loadline and the current-voltage (I-V) curve of TD. Meanwhile, we have grown ErAs Nps on GaAs(100) surface by using MBE and succeeded in overgrowth of GaAs after ErAs deposition. GaAs(p+)/ErAs(Nps)/GaAs(n+) TDs were fabricated and characterized. We found the GaAs sample containing 70s deposition of ErAs showed the best TD behavior. No TD behavior was observed for the sample without addition of ErAs Nps, clearly indicating the strong tunneling enhancement effect from ErAs Nps.

Keywords

crystal growthphotovoltaicelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1602: Symposium S – Photovoltaic Materials and Devices: Terrestrial and Space Applications , 2014 , jsapmrs13-1602-6251
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

King, R.R., Law, D.C., Edmondson, K.M. and Fetzer, C.M., Kinsey, G.S., Yoon, H., Sherif, R.A., Karam, N.H., Appl. Phys. Lett. 90, 183516 (2007).10.1063/1.2734507CrossRefGoogle Scholar
Yamaguchi, M., Takamoto, T. and Araki, K., Sol. Energ. Mat. Sol. Cells. 90, 3068 (2006).10.1016/j.solmat.2006.06.028CrossRefGoogle Scholar
Petukhov, A.G., Lambrecht, W.R.L. and Segall, B., Phys. Rev. B, 53, 4324 (1996).10.1103/PhysRevB.53.4324CrossRefGoogle Scholar
Nair, H.P., Crook, A.M., and Bank, S. R., Appl. Phys. Lett. 96, 222104(2010).10.1063/1.3442909CrossRefGoogle Scholar
Palmstrøm, C. J., Tabatabaie, N., and Allen, S. J., Appl. Phys. Lett. 53, 2608 (1988).10.1063/1.100173CrossRefGoogle Scholar
Delaney, Kris T.,1 Spaldin, Nicola A.,2 and Van de Walle, Chris G.2 Sands, T., Palmstrom, C.J., Harbison, J.P., Keramidas, V.G., Tabatabaie, N., Cheeks, T.L., Ramesh, R. and Silberberg, Y., Mater. Sci. Rep. 5, 99 (1990).Google Scholar
Yamaguchi, H. and Horikoshi, Y., Appl. Phys. Lett. 60, 2341 (1992).10.1063/1.107020CrossRefGoogle Scholar
Guter, W. and Bett, A.W., IEEE Trans. Electron. Dev. 53, 2216 (2006).10.1109/TED.2006.881051CrossRefGoogle Scholar
Delaney, K.T., 1 Spaldin, N.A., and Van de Walle, C. G., Phys.Rev.B 81, 165312 (2010).10.1103/PhysRevB.81.165312CrossRefGoogle Scholar