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Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

Published online by Cambridge University Press:  01 February 2011

Koji Aizawa
Koji Aizawa*
Affiliation:
[email protected], Kanazawa Institute of Technology, OEDS R&D Center, 7-1 Ohgigaoka, Nonoichi, ishikawa, 921-8501, Japan
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Abstract

Characterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

Keywords

ferroelectricelectrical propertiespolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-05
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Ross, I. M. U.S.Patent No.2791760 (1957).Google Scholar
2. Nakao, Y. Nakamura, T. Kamisawa, A. and Takasu, H. Integr. Ferroelectr. 6, 23 (1995).Google Scholar
3. Tokumitsu, E. Fujii, G. and Ishiwara, H. Mat. Res. Soc. Symp. Proc. 493, 459 (1998).Google Scholar
4. Naber, R. C. G. Tanase, C. Blom, P. W. M. Gelinck, G. H. Marsman, A. W. Touwslager, F. J. Setayesh, S. and Leeuw, D. M. de, Nat. Mater. 4, 243 (2004).Google Scholar
5. Tashiro, K. Ferroelectric Polymers, edited by Nalwa, H. (Marcel Dekker, New York, 1995), p. 63.Google Scholar
6. Fujisaki, S. Ishiwara, H. and Fujisaki, Y. Appl. Phys. Lett. 90, 162902 (2007).Google Scholar
7. Noh, S. H. Choi, W. Oh, M. S. Hwang, D. K. Lee, K. Im, S. Jang, S. and Kim, E. Appl. Phys. Lett. 90, 253504 (2007).Google Scholar
8. Michaeson, H. B. J. Appl. Phys. 48, 4929 (1977).Google Scholar
9. Minami, T. MRS Bulletin 25, 38 (2000).Google Scholar
10. Rose, A. Phys. Rev. 97, 1538 (1955).Google Scholar
11. Muller, K. Paloumpa, I. Henkel, K. and Schmeisser, D. J. Appl. Phys. 98, 056104 (2005).Google Scholar
12. Stamate, M. D. Thin Solid Films 372, 246 (2000).Google Scholar
13. Xia, F. and Zhang, Q. M. Appl. Phys. Lett. 85, 1719 (2004).Google Scholar