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Fabrication and Characterization of Electrowetting on the flexible substrate

Published online by Cambridge University Press:  01 February 2011

Jin-Young Kim ,
JungHo Seo ,
JungHwan Lee ,
KyuChae Kim ,
Hyun Woo Lim ,
JinGoo Park ,
SungChae Jeon ,
SeoungOh Jin  and
Young Huh
Jin-Young Kim
Affiliation:
[email protected], HanYang University, Materials and Chemical Engineering, 1271 Sa-1dong Sangrok-gu, Ansan, 426-791, Korea, Republic of, 82-31-500-3453, 82-31-500-3452
JungHo Seo
Affiliation:
[email protected], Hanyang University, Materials and Chemical Engineering, Ansan, 426-791, Korea, Republic of
JungHwan Lee
Affiliation:
[email protected], Hanyang University, MicroBiochipCenter, Ansan, 426-901, Korea, Republic of
KyuChae Kim
Affiliation:
[email protected], Hanyang University, Materials and Chemical Engineering, Ansan, 426-791, Korea, Republic of
Hyun Woo Lim
Affiliation:
[email protected], Hanyang University, MicroBiochipCenter, Ansan, 426-901, Korea, Republic of
JinGoo Park
Affiliation:
[email protected], Hanyang University, Materials and Chemical Engineering, Ansan, 426-791, Korea, Republic of
SungChae Jeon
Affiliation:
[email protected], Korea Electrotechnology Research Institute, Ansan, 426-801, Korea, Republic of
SeoungOh Jin
Affiliation:
[email protected], Korea Electrotechnology Research Institute, Ansan, 426-801, Korea, Republic of
Young Huh
Affiliation:
[email protected], Korea Electrotechnology Research Institute, Ansan, 426-801, Korea, Republic of
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Abstract

This paper reports the fabrication of and characterization on EWOD(electrowetting-on-dielectric) devices on flexible substrates of interest to the flexible displays and devices. The EWOD devices were fabricated on PET (poly ethylene terephthalate) and PMMA (polymethylmethacrylate) substrates. Au and ITO(indium tin oxide) were used as electrode materials. The wet etching process was developed not to attack plastic flexible substrates. The photo resist was used as an insulator materials in EWOD devices due to the deformation of substrate when oxide layer was deposited on plastic substrate. As a hydrophobic layer, cytop was spin-coated on the photo resist. Wetting tests were done with DI water in air environment. In sessile droplet test, the contact angle of droplet changed from 116◦ to 80◦ under DC power. Threshold voltage was 20 Vdc. The droplet was oscillated under AC power because of the frequency. But the contact angle of droplet was began to change at 30Vac and decrease with the increase of AC power. In droplet transporting test, a droplet(0.2§¡) was started transporting at 20Vac and the transporting speed increased with the increase of AC power. But the droplet transporting was not occurred under DC power because of slower contact angle recovery rate under DC power.

Keywords

microelectro-mechanical (MEMS)microelectronicselectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1004: Symposium P – Materials and Strategies for Lab-on-a-Chip-Biological Analysis, Microfactories, and Fluidic Assembly of Nanostructures , 2007 , 1004-P08-09
Copyright
Copyright © Materials Research Society 2007

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