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Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Charlotte Elizabeth Jonas ,
Qingchun Zhang ,
Sei-Hyung Ryu ,
Anant Agarwal  and
John Palmour
Charlotte Elizabeth Jonas
Affiliation:
[email protected], Cree, Inc., Power, 4600 Silicon Dr., Durham, NC, 27703, United States
Qingchun Zhang
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Sei-Hyung Ryu
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
John Palmour
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
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Abstract

P-channel planar IGBT devices were made on 4H-SiC. Punch-through buffer and drift layers were designed to block 5 kV were grown on 4H-SiC n-type substrate. Ion implantion was used for all selective doping such as n-well, p+, n+, JFET region and terminations. Gate oxidation was thermally grown and annealed. Blocking voltage of 5.7 kV was demonstrated. IGBTs exhibit VTH of -12 V, VT = -3.1 V, Rdiff,on = 400 mΩcm2 at Vg = -34 V at room temperature. Ron decreased to 108 mΩcm2 at Vg = -30 V at 300°C.

Keywords

devicesion-implantationoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-05
Copyright
Copyright © Materials Research Society 2006

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References

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