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Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

Published online by Cambridge University Press:  10 February 2011

V. Ziebartl
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
O. Paul
Affiliation:
Institute for Microsystem Technology, University of Freiburg, D-791 10 Freiburg, Germany
H. Baltes
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
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Abstract

We report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α01(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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