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Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Published online by Cambridge University Press:  21 March 2011

Y.G. Zhou ,
B. Shen ,
H.Q. Yu ,
J. Liu ,
H.M. Zhou ,
R. Zhang ,
Y. Shi ,
Y.D. Zheng ,
T. Someya  and
Y. Arakawa
Y.G. Zhou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
H.Q. Yu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
J. Liu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
H.M. Zhou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
R. Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Y. Shi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Y.D. Zheng
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
T. Someya
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Arakawa
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
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Abstract

A method based on Schottky capacitance-voltage (C-V) simulation was developed to extract the polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures. There are two characteristic slopes in the experimental and simulated C-V curves.The influences of the polarization-induced charge density, n-AlGaN doping level and the Schottky barrier height on the positions of the two slopes in the C-V curves are much different from each other. The polarization-induced charge density can be extracted accurately by fitting the experimental C-V curves. It is extracted to be 6.78 x 1012cm-2in modulation-doped Al0.22Ga0.78N/GaN heterostructures with the Al0.22Ga0.78N thickness of 30 nm or 45 nm. The charge density reducesto 1.30 x 1012cm-2in the heterostructure with the Al0.22Ga0.78N thickness of 75 nm. It is thought that the reduction of the polarization-induced charges at the heterointerface is due to the partial relaxation of the Al0.22Ga0.78N layer on GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.42.1
Copyright
Copyright © Materials Research Society 2002

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