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Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

Published online by Cambridge University Press:  26 February 2011

HO-JUN Lee ,
Chul-Hi Han  and
Choong-Ki Kim
HO-JUN Lee
Affiliation:
also at Semiconductor R/D Laboratory of Hyundai Electronics Industries Co, Ltd, Ichon, Korea.
Chul-Hi Han
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea.
Choong-Ki Kim
Affiliation:
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea.
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Abstract

In this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 129
Copyright
Copyright © Materials Research Society 1995

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