Hostname: page-component-669899f699-qzcqf Total loading time: 0 Render date: 2025-04-29T02:04:19.958Z Has data issue: false hasContentIssue false
  • English
  • Français

Extended Pseudomorphic Limits Using Compliant Substrates

Published online by Cambridge University Press:  25 February 2011

Y. H. Lo ,
W. J. Schaff  and
D. Teng
Y. H. Lo
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
W. J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
D. Teng
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

We propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 191
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Lo, Y. H., Appl. Phys. Lett., Vol. 59, no. 18, p. 2311, 1991.Google Scholar
[2] Hirth, J. P. and Evans, A. G., J. Appl. Phys., Vol. 60, p. 2372, 1986.Google Scholar
[3] Teng, D. and Lo, Y. H., to be published in Appl. Phys. Lett., Jan. 1993.Google Scholar
[4] Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett., Vol. 51, p. 1325, 1987.Google Scholar
[5] Teng, D., Unpublished.Google Scholar
[6] Alexander, H. and Haasen, P., in Solid State Physics, Vol. 22, (Academic, New York, 1968).Google Scholar
[7] Anderson, T. G., Chen, Z. G., Kulakovski, V. D., Uddin, A., and Vallin, J. T., Appl. Phys. Lett., Vol. 51, p. 752, 1987.Google Scholar
[8] Tsao, J. Y. and Dodson, B. W., Appl. Phys. Lett., Vol. 53, p. 848, 1988.Google Scholar
[9] Matthews, J. W., Mader, S., and Light, T. B., J. Appl. Phys., Vol. 41, p. 3800, 1970.Google Scholar