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Extended Pseudomorphic Limits Using Compliant Substrates

Published online by Cambridge University Press:  25 February 2011

Y. H. Lo ,
W. J. Schaff  and
D. Teng
Y. H. Lo
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
W. J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
D. Teng
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

We propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 191
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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