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Extended Damage Depth Determinations in AR- and H-Implanted Silica Glass

Published online by Cambridge University Press:  22 February 2011

G.W. Arnold ,
G. Battaglin  and
P. Mazzoldi
G.W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
G. Battaglin
Affiliation:
Universita di Venezia, Venezia, Italy
P. Mazzoldi
Affiliation:
Universita di Padova, Padova, Italy
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Abstract

Damage depths for Ar-implanted fused silica have been examined by Rutherford backscattering (RBS) and elastic recoil detection (ERD) ion-beam analysis. H incursion (6 at. %) from ambient atmospheres to twice TRIM values was found for damage depths which intersected the surface. H implants were used to decorate Ar damage for deeper Ar implants. The incursion of H for high-fluence implants is important for optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 111
Copyright
Copyright © Materials Research Society 1994

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References

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