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Exponential Band Tails at Silicon Grain Boundaries

Published online by Cambridge University Press:  28 February 2011

J. Werner  and
M. Peisl
J. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr.l D-7000 Stuttgart 80, Federal Republic of Germany
M. Peisl
Affiliation:
Siemens AG, Zentrale Forschung × Entwicklung, Otto-Hahn-Ring 6 D-8000 München 83, Federal Republic of Germany
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Abstract

The energy-distribution of interface states at grain boundaries in fine-grained silicon films is measured by two independent methods. The analysis reveals deep exponential band tails in the two-dimensional density of states within the band gap. It is proposed that these tails originate from Anderson localization of free carriers within potential fluctuations along the grain boundary plane. The measurements are in good agreement with this model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 575
Copyright
Copyright © Materials Research Society 1985

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References

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