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Explosive Recrystallization Of Ion Implantation Amorphous Silicon Layers

Published online by Cambridge University Press:  15 February 2011

J. Narayan ,
G. R. Rozgonyi ,
D. Bensahel ,
G. Auvert ,
V. T. Nguyen  and
A. K. Rai
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. R. Rozgonyi
Affiliation:
Materials Engineering Dept., North Carolina State University, Raleigh, NC 27650
D. Bensahel
Affiliation:
Cnet, Meylan, Grenoble, France
G. Auvert
Affiliation:
Cnet, Meylan, Grenoble, France
V. T. Nguyen
Affiliation:
Cnet, Meylan, Grenoble, France
A. K. Rai
Affiliation:
Universal Energy Systems, Inc., Dayton, OH 45432
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Abstract

Explosive recrystallization of amorphous layers, induced by scanned electron or CW Ar+ laser beams, has been investigated in arsenic implanted (100) specimens. We have studied the microstructural changes using plan-view and crosssection electron microscopy to obtain the mechanism of explosive recrystallization phenomenon. The confinement of heat in the amorphous layers during laser irradiation and the nature of amorphous silicon determine the modes of explosive recrystallization. We indicate that, depending upon the degree of undercooling, two distinct modes of liquid-phase recrystallization are observed: one occurring at a velocity of, ∼2 ms−1 and the other at ∼10ms−1. Explosively recrystallized grains contain <110> and <110> as surface normal and growth direction respectively. We present a model for unseeded crystallization to explain the <110> texture observed in diamond cubic lattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 177
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

REFERENCES

1.Takamori, T., Messier, R. and Roy, R., Appl. Phys. Lett. 20, 201 (1972).Google Scholar
2.Chapman, R. L., Fan, J.C.C., Zeiger, H. J. and Gale, R. P., Appl. Phys. Lett. 37, 292 (1980);Google Scholar
2aGale, R. P., Fan, J.C.C., Chapman, R. L. and Zeiger, H. J., p.439 in Defects in Semiconductors, ed. by Narayan, J. and Tan, T. Y., North Holland, New York, 1980.Google Scholar
3.Auvert, G., Bensahel, D., Perio, A., Nguyen, V. T. and Rozgonyi, G. A., Appl.Phys. Lett. 39, 724 (1981).Google Scholar
4.Lerme, M., Ternisien D'ouville, T., Vu, Duy-Phack, Perio, A., Rozgonyi, G. A. and Nguyen, V. T., p. 547 in Laser and Electron Beam Interactions with Solids, ed. by Appleton, B. R. and Celler, G. K., North Holland, New York, 1982.Google Scholar
5.Leamy, H. J., Brown, W. L., Celler, G. K., Foti, G., Gilmer, G. H. and Fan, J.C.C., Appl. Phys. Lett. 38, 137 (1981).Google Scholar
6.Narayan, J., J. Appl. Phys. (Dec. 1982).Google Scholar
7.Spaepen, F., Phil. Mag. 30, 417 (1974).Google Scholar
8.Drosd, R. and Washburn, J., J. Appl. Phys. 53, 397 (1982).Google Scholar