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Exploration of New Properties of Oxides by the Growth Control Using Pulsed Laser Epitaxy

Published online by Cambridge University Press:  10 February 2011

Hideomi Koinuma
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan CREST, Japan Science and Technology, Japan National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, 305-0044, Japan
Takashi Koidal
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
Daisuke Komiyama
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
Mikk Lippmaa
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, 305-0044, Japan Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
Akira Ohtomo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
Masashi Kawasaki
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, 305-0044, Japan Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan
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Abstract

Metal oxides exhibit a wide variety of properties originating mainly from strong electron correlation. Electronic properties of oxides had been utilized mostly in the bulk form till recently and people frequently observed significant changes in such properties when these materials were converted into thin films. For the electronic application in recent years, hybridization and integration of materials in thin film forms are becoming more and more important. In view of our recent studies on high-Tc superconducting junctions and ZnO light emitting devices, this paper is devoted to stimulate the exploration of oxides as new innovative electronic materials by discussing the control of epitaxial thin film growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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