Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-05T04:31:27.343Z Has data issue: false hasContentIssue false

Exploiting Phosphate Dependent DNA Immobilization on HfO2, ZrO2 and AlGaN for Integrated Biosensors

Published online by Cambridge University Press:  31 January 2011

Nicholas M Fahrenkopf
Affiliation:
[email protected], College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, New York, 12203, United States
Vibhu Jindal
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, New York, United States
Neeraj Tripathi
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Serge Oktyabrsky
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Fatemeh Shahedipour-Sandvik
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Natalya Tokranova
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Magnus Bergkvist
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Nathaniel C Cady
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, United States
Get access

Abstract

A significant challenge for high throughput nucleic acid analysis and sequencing is to increase both throughput and sensitivity. Electrical detection methods are advantageous since they can be easily scaled to high density arrays, are highly sensitive, and do not require bulky optical equipment for readout. A focus of most nucleic acid based sensors is the detection of sequence-specific hybridization events between complementary strands of DNA or RNA. These hybridization events can be detected electrically, due to the intrinsic negative charge associated with the phosphate-rich nucleic acid backbone. Field effect transistors (FETs) and high electron mobility transistors (HEMTs) are ideal devices for detecting such hybridization events, due to their high sensitivity to changes in electrical field strength. A key concern for the construction of DNA-based FET and HEMT biosensors is the immobilization of probe oligonucleotides on the active region of the sensor. In previous work, our group has shown that single stranded DNA can be directly immobilized onto semiconductor materials without the need for complex surface chemistry or crosslinking strategies. In the present work, we have shown that the immobilization of single stranded DNA onto these materials is influenced by the terminal phosphate group of the DNA molecule, independent of backbone phosphates. This agrees with previous studies in which phosphates and phosphonates exhibited strong attachment to a variety of metal oxides. We have also shown that surface-immobilized DNA is available for hybridization and that hybridization is sequence specific. Phosphate-dependent immobilization was demonstrated for HfO2, AlGaN, and ZrO2 surfaces using optical detection of DNA-DNA hybridization, as well as x-ray photoelectron spectroscopy (XPS) analysis of DNA-modified surfaces.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sassolas, A. Leca-Bouvier, B. D., and Blum, L. J.DNA Biosensors and Microarrays,” Chem. Rev., vol. 108, p. 31, 2008.Google Scholar
[2] Teles, F. R. R. and Fonseca, L. P.Trends in DNA Biosensors,” Talanta, vol. 77, p. 18, 2008.Google Scholar
[3] Im, H. Huang, X. Gu, B. and Choi, Y.A dielectric-modulated field-effect transistor for biosensing,” Nature Nanotechnology, vol. 2, pp. 430434, 2007.Google Scholar
[4] Kang, B. S. Pearton, S.J., Chen, J.J., Ren, F., Johnson, J.W., Therrien, R.J., Rajagopal, P., Roberts, J.C., Piner, E.L., Linthicum, K.J., “Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors,” in Materials Research Society Symposium, 2007.Google Scholar
[5] Fahrenkopf, N. M. Oktyabrsky, S. Eisenbraun, E. Bergkvist, M. Shi, H. and Cady, N. C. “Phosphate Dependent DNA Immobilization on Hafnium Oxide for Bio-sensing Applications,” Proceedings of the Materials Research Society, 2009.Google Scholar
[6] Byrd, H. Pike, J. K. and Talham, D. R.Inorganic Monolayers Formed at an Organic Template: A Langmuir-Blodgett Route to Monolayer and Multilayer Films of ZIrconium Octadecylphosphonate,” Chem. Mater., vol. 5, p. 7, 1993.Google Scholar
[7] Gao, W. Dickinson, L. Grozinger, C. Morin, F. G. and Reven, L.Self-Assembled Monolayers of Alkylphosphonic Acids on Metal Oxides,” Langmuir, vol. 12, p. 7, 1996.Google Scholar
[8] Hanson, E. L. Schwartz, J. Nickel, B. Koch, N. and Danisman, M. F.Bonding Self-Assembled, Compact Organophosphonate Monolayers to the Native OXide Surface of Silicon,” J. AM. CHEM. SOC., vol. 125, p. 7, 2003.Google Scholar
[9] Jespersen, M. L. Inman, C. E. Kearns, G. J. Foster, E. W. and Hutchison, J. E.Alkanephosphonates on Hafnium-Modified Gold: A New Class of Self-Assembled Organic Monolayers,” J. AM. CHEM. SOC., vol. 129, p. 5, 2007.Google Scholar
[10] Xu, X. Jindal, V. Shahedipour-Sandvik, F., Bergkvist, M. and Cady, N. C.Direct immobilization and hybridization of DNA on group III nitride semiconductors,” Applied Surface Science, vol. 255, pp. 59055909, 2009.Google Scholar
[11] Clark, R. D. Consiglio, S. Wajda, C. S. Leusink, G. J. Sugawara, T. Nakabayashi, H. Jagannathan, H., Edge, L. F. Jamison, P. Paruchuri, V. K. Iijima, R. Takayanagi, M. Linder, B. P., Bruley, J. Copel, M. and Narayanan, V.High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes,” ECS Transactions, vol. 16, p. 14, 2008.Google Scholar
[12] Clark, R. D. Wajda, C. S. Leusink, G. J. Edge, L. F. Faltermeier, J. Jamison, P. Linder, B. P., Copel, M. Narayanan, V. Gribelyuk, M. Loesing, R. and Murphy, R.Process and Electrical Characteristics of MO-ALD HfO2 Films for High-K Gate Applications Grown in a Production-Worthy 300 mm Deposition System,” ECS Transactions, vol. 11, p. 15, 2007.Google Scholar
[13] Rashband, W. S. “ImageJ,” Bethesda, MD: US National Institutes of Health, 1997-2008.Google Scholar
[14] Liu, Z.-C. Zhang, X. He, N.-Y., Lu, Z.-H., and Chen, Z.-C., “Probing DNA hybridization efficiency and single base mismatch by X-ray photoelectron spectroscopy,” Colloids and Surfaces B: Biointerfaces, vol. 71, p. 5, 2009.Google Scholar