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Explanation of Light-Enhanced Annealing of Defects in Amorphous Silicon

Published online by Cambridge University Press:  16 February 2011

David Redfield  and
Richard Bube
David Redfield
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
Richard Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
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Abstract

Several recent measurements have shown that annealing of metastable defects in a- Si:H can be accelerated by the presence of light. This is the opposite of the usual light-induced defect generation, and no existing rate equation explains it while maintaining the necessary symmetry of generation and recovery processes, and consistency with the stretched-exponential transients that best describe observed generation and anneal behavior. This paper shows that this light-enhanced annealing (LEA) can be explained readily by the usual rate equation leading to stretched exponentials with no other terms by allowing a variation of coefficients with temperature or light intensity. This equation then leads to good simulations of observed LEA. Interpretation of these results in terms of distributional changes is presented, and an experimental test is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 263
Copyright
Copyright © Materials Research Society 1994

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References

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