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Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

Published online by Cambridge University Press:  21 February 2011

W. Bencivelli
Affiliation:
Istituto di Patologia Speciale Medica dell'Università and Sezione I.N.F.N., Pisa, Italy
E. Bertolucci
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
U. Bottigli
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
A. Cavallini
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
S. D'Auria
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
C. Da Via
Affiliation:
European Laboratory for Particle Physics (CERN), Geneva, Switzerland
C. Del Papa
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
M.E. Fantacci
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
V. Rosso
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
A. Stefanini
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
G. Stefanini
Affiliation:
European Laboratory for Particle Physics (CERN), Geneva, Switzerland
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Abstract

Gallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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