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Experimental and Theoretical Studies of the Si(100)/SiO2 Interface Formed by Wet and Dry Oxidation

Published online by Cambridge University Press:  11 February 2011

A. Roy Chowdhuri ,
Dong-Un Jin  and
C. G. Takoudis
A. Roy Chowdhuri
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, Illinois 60607–7000., USA.
Dong-Un Jin
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, Illinois 60607–7000., USA.
C. G. Takoudis
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, Illinois 60607–7000., USA.
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Abstract

Interfacial strain and substoichiometric silicon oxides are the two principal causes that result in the redshift of the transverse and longitudinal optical phonons of the asymmetric stretch of O in the Si-O-Si bridging bond of thermal SiO2 with decreasing oxide thickness. Analyses to comprehend these effects, therefore, require consideration of both strain and interfacial substoichiometry. A method to isolate the contributions of strain and suboxide content towards the observed shifts is proposed. The procedure, which utilizes simple optical model and effective medium approximation, allows estimation of the average strain and suboxide concentration in films of different thickness. Analyses of oxides formed at two different temperatures (550 and 700°C) with dry and wet oxygen reveal how process conditions affect the interface properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V6.2
Copyright
Copyright © Materials Research Society 2003

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