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Experimental and Theoretical Joint Study on the Electronic and Structural Properties of Silicon Nanocrystals Embedded in SiO2: active Role of the Interface Region

Published online by Cambridge University Press:  10 February 2011

N. Daldosso ,
M. Luppi ,
G. Dalba ,
L. Pavesi ,
F. Rocca ,
F. Priolo ,
G. Franzò ,
F. Iacona ,
E. Degoli  and
R. Magri
...Show all authors
N. Daldosso
Affiliation:
INFM-Dipartimento di Fisica, Univ. di Trento, via Sommarive 14, 38050 Povo, Trento, Italy
M. Luppi
Affiliation:
INFM-Dipartimento di Fisica, Univ. di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy
G. Dalba
Affiliation:
INFM-Dipartimento di Fisica, Univ. di Trento, via Sommarive 14, 38050 Povo, Trento, Italy
L. Pavesi
Affiliation:
INFM-Dipartimento di Fisica, Univ. di Trento, via Sommarive 14, 38050 Povo, Trento, Italy
F. Rocca
Affiliation:
CNR-IFN, Sezione “CeFSA” di Trento, I-38050 Povo, Trento, Italy
F. Priolo
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, 95129 Catania, Italy
G. Franzò
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, 95129 Catania, Italy
F. Iacona
Affiliation:
CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy
E. Degoli
Affiliation:
INFM-S3-DISMI, Univ. di Modena e Reggio Emilia, via Allegri 13, 42100 Reggio Emilia, Italy
R. Magri
Affiliation:
INFM-Dipartimento di Fisica, Univ. di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy
S. Ossicini
Affiliation:
INFM-S3-DISMI, Univ. di Modena e Reggio Emilia, via Allegri 13, 42100 Reggio Emilia, Italy
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Abstract

The local environment of light emitting silicon nanocrystals (Si-nc) embedded in amorphous SiO2 has been studied by x-ray absorption spectroscopy (XAS) and by ab-initio total energy calculations. Si-nc have been formed by PECVD deposition of SiOx with different Si content (from 35 to 42 at.%) and thermal annealing at high temperature (1250 °C). The comparison between total electron yield (TEY) and photoluminescence yield (PLY) spectra has allowed the identification of a modified region of SiO2 (about 1 nm thick) surrounding the Si-nc, which participates to the light emission of Si-nc. Total energy calculations, within the density functional theory, clearly show that Si-nc are surrounded by a cap-shell of stressed SiO2 with a thickness of about 1 nm. The optoelectronic properties show the appearance of localized states not only in the Si-nc core region but also in the modified SiO2 region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I6
Copyright
Copyright © Materials Research Society 2003

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