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Experimental and Theoretical Investigation into the Dielectric Behaviour of Ferroelectric Thin Film Superlattices

Published online by Cambridge University Press:  18 March 2011

J. M. Gregg ,
D. O'Neill ,
G. Catalan  and
R. M. Bowman
J. M. Gregg
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
D. O'Neill
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
G. Catalan
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
R. M. Bowman
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
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Abstract

Pulsed laser deposition has been used to fabricate thin-film capacitor structures in which the dielectric layer is composed of a superlattice of Ba0.8Sr0.2TiO3 and Ba0.2Sr0.8TiO3. The properties of the capacitors were investigated as a function of superlattice periodicity. The dielectric constant was significantly enhanced, and temperature migration of the peak in dielectric constant as a function of frequency was observed, at stacking periodicities of a few unit cells. However, such “relaxor-like’ features were found to be associated with high dielectric loss. Analysis of the imaginary permittivity as a function of frequency showed that fine-scale superlattices conform to Maxwell-Wagner behaviour, indicating that the observed features may be an artefact of increased carrier mobility. Modelling showed that both dielectric enhancement and frequency relaxation could readily be reproduced by Maxwell-Wagner formalism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 656: Symposium DD – Materials Issues for Tunable RF and Microwave Devices II , 2000 , DD6.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Park, K., Salamancariba, L., Wuttig, M., and Viehland, D., J. Mat Sci, 29, 1284 (1994).Google Scholar
[2] Mathan, N. de, J. Phys.: Condens. Matter 3, 8159 (1991).Google Scholar
[3] Setter, N. and Cross, L. E., J. Appl. Phys. 51, 4356 (1980).Google Scholar
[4] Yan, Y., Pennycook, S. J., Xu, Z., and Viehland, D., Appl. Phys. Lett., 72, 3145 (1998).Google Scholar
[5] Erbil, A., Kim, Y. and Gerhardt, R. A., Phys. Rev. Lett., 77, 1628 (1996).Google Scholar
[6] Qu, B. D., Evstigneev, M., Johnson, D. J. and Prince, R. H., Appl. Phys. Lett., 72, 1394 (1998).Google Scholar
[7] Tabata, H., Tanaka, H., Kawai, T., Okuyama, M., Jpn. J. Appl. Phys., 34, 544 (1995).Google Scholar
[8] Tabata, H., Tanaka, H., and Kawai, T., Appl. Phys. Lett. 65, 1970 (1994).Google Scholar
[9] Li, Shaoping, Eastman, J. A., Vetrone, J. M., Newnham, R. E. and Cross, L. E., Phil. Mag. B, 76, 47 (1997).Google Scholar
[10] Kanno, I., Hayashi, S., Takayama, R. and Hirao, T., Appl. Phys. Lett., 68, 328 (1996).Google Scholar
[11] Ohya, Y., Ito, T., Takahashi, Y., Jpn. J. Appl. Phys. 33, 5272 (1994).Google Scholar
[12] , Volger, Progress in Semiconductors, 4, 207 (1960).Google Scholar
[13] Hippel, A. von, Dielectrics and Waves, Artech House, London, 1995 Google Scholar
[14] Roy, D., Krupanidhi, S. B., Appl. Phys. Lett., 62, 1056 (1993).Google Scholar
[15] Stumpe, R., Wagner, D., Bauerle, D., Phys. Stat. Sol., 75, 143 (1983).Google Scholar