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Experimental and Theoretical Investigation into the Dielectric Behaviour of Ferroelectric Thin Film Superlattices

Published online by Cambridge University Press:  18 March 2011

J. M. Gregg ,
D. O'Neill ,
G. Catalan  and
R. M. Bowman
J. M. Gregg
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
D. O'Neill
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
G. Catalan
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
R. M. Bowman
Affiliation:
Condensed Matter Physics and Materials Science Division School of Maths and Physics, Queen's University Belfast Belfast BT7 1NN, U. K.
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Abstract

Pulsed laser deposition has been used to fabricate thin-film capacitor structures in which the dielectric layer is composed of a superlattice of Ba0.8Sr0.2TiO3 and Ba0.2Sr0.8TiO3. The properties of the capacitors were investigated as a function of superlattice periodicity. The dielectric constant was significantly enhanced, and temperature migration of the peak in dielectric constant as a function of frequency was observed, at stacking periodicities of a few unit cells. However, such “relaxor-like’ features were found to be associated with high dielectric loss. Analysis of the imaginary permittivity as a function of frequency showed that fine-scale superlattices conform to Maxwell-Wagner behaviour, indicating that the observed features may be an artefact of increased carrier mobility. Modelling showed that both dielectric enhancement and frequency relaxation could readily be reproduced by Maxwell-Wagner formalism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 656: Symposium DD – Materials Issues for Tunable RF and Microwave Devices II , 2000 , DD6.9
Copyright
Copyright © Materials Research Society 2001

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References

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