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Exigent-Accommodation-Volume of Precipitation and Formation of Oxygen Precipitates in Silicon

Published online by Cambridge University Press:  28 February 2011

T. Y. Tan
T. Y. Tan*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

In this paper we first describe, in some detail, the nature of an exigentaccommodation- volume factor associated with oxygen (Oi) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO2 precipitate nucleation and growth phenomena. Employing this factor, we then describe the possible explanations of two outstanding features of Oi precipitation in CZ Si: the precipitation retardation/recovery phenomena and the nucleation incubation phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 269
Copyright
Copyright © Materials Research Society 1986

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References

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